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Power Transistors
INCHANGEa
2N5298
Silicon NPN Transistors
Features
With TO-220 package Designed for use in general purpose amplifier and switching applications
Absolute Maximum Ratings Tc=25
SYMBOL VCBO VCEO VEBO ICP IC PC Tj Tstg PARAMETER Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature RATING 80 60 5.0 5.0 4.0 36 -65~150 -65~150 UNIT V V V A A W
TO-220
Electrical Characteristics Tc=25
SYMBOL ICBO IEBO ICEO VCBO V(BR)CEO VEBO VCEsat-1 VCEsat-2 VCEsat-3 VCEsat-4 hFE-1 hFE-2 hFE-3 hFE-4 VBE(sat)1 VBE(sat)2 VBE(sat)3 fT tf ts PARAMETER Collector-base cut-off current Emitter-base cut-off current Collector-emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltages Collector-emitter saturation voltages Collector-emitter saturation voltages Collector-emitter saturation voltages Forward current transfer ratio Forward current transfer ratio Forward current transfer ratio Forward current transfer ratio Base-emitter saturation voltages Base-emitter saturation voltages Base-emitter saturation voltages Transition frequency at f = 1MHz Fall time Tum-off storage time IC=0.5A,VCE=10V 3.0 IC=3A,VCE=4V 1.8 V IC=1A,VCE=4V IC=3A,VCE=4V 25 10 50 IC = 3A; IB = 375mA 1.2 V IC=30mA,IB=0 60 V CONDITIONS VCB = 80V; IE=0 VEB = 5V; IC=0 VCE=60V,IB=0 MIN MAX 0.2 1.0 0.3 UNIT mA mA mA

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